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| STPRF1605CT-STPRF1660CT Vishay Lite-On Power Semiconductor 16A Super-Fast Glass Passivated Rectifiers Features D D D D Glass passivated die construction Diffused junction Super-fast switching for high efficiency High current capability and low forward voltage drop D Surge overload rating to 200A peak D Low reverse leakage current D Plastic material - UL Recognition flammability classification 94V-0 95 9630 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage DC Blocking lt =DC Bl ki voltage Test Conditions Type STPRF1605CT STPRF1610CT STPRF1615CT STPRF1620CT STPRF1630CT STPRF1640CT STPRF1650CT STPRF1660CT Symbol VRRM =VRWM V =VR Value 50 100 150 200 300 400 500 600 200 16 -65...+150 Unit V V V V V V V V A A C Peak forward surge current Average forward current TC=100C Junction and storage temperature range IFSM IFAV Tj=Tstg Electrical Characteristics Tj = 25_C Parameter Forward voltage g Test Conditions IF=8A Type STPRF1605CT-1620CT STPRF1630CT-1640CT STPRF1650CT-1660CT Symbol Min VF VF VF IR IR trr trr CD CD RthJC Typ Max 0.95 1.3 1.5 5 500 35 50 85 60 3.1 Unit V V V TC=25C TC=100C Reverse recovery time IF=1A, IR=0.5A, y Irr=0.25A Diode capacitance Thermal resistance junction to case VR=4V, f=1MHz Reverse current mA mA ns ns pF pF K/W STPRF1605CT-1620CT STPRF1630CT-1660CT STPRF1605CT-1640CT STPRF1650CT-1660CT Rev. A2, 24-Jun-98 1 (4) STPRF1605CT-STPRF1660CT Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified) IFAV - Average Forward Current ( A ) 20 C D - Diode Capacitance ( pF ) 400 Tj = 25C f = 1 MHz 16 1605 - 1640 12 8 100 1650 - 1660 4 0 0 50 100 150 10 0.1 15456 1.0 10 100 15453 Tamb - Ambient Temperature ( C ) VR - Reverse Voltage ( V ) Figure 1. Max. Average Forward Current vs. Ambient Temperature 100 IF - Forward Current ( A ) Pulse Width = 300 s 2% Duty Cycle 50V-200V 300V- 400V Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 100 IR - Reverse Current ( m A ) 10 10 Tj = 100C 1.0 Tj = 75C 500V-600V 1.0 0.1 Tj = 25C 0.1 0.2 15454 0.01 0.6 1.0 1.4 15457 VF - Forward Voltage ( V ) 0 40 80 120 Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage 300 250 200 150 100 50 0 Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage IFSM - Peak Forward Surge Current ( A ) 8.3 ms Single Half-Sine-Wave JEDEC method 1 10 Number of Cycles at 60 Hz 100 15455 Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98 STPRF1605CT-STPRF1660CT Vishay Lite-On Power Semiconductor Dimensions in mm 14468 Case: molded plastic Polarity: as marked on body Approx. weight: 2.24 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4) STPRF1605CT-STPRF1660CT Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) Rev. A2, 24-Jun-98 |
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